ROHM Semiconductor RF2001T4S
Fast Recovery Diode
| Part No. | RF2001T4S |
|---|---|
| Datasheet | RF2001T4S Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Fast Recovery Diode |
| Buy | Stock & Price |
APPLICATIONS
General rectification ●Dimensions (Unit : mm)
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FEATURES
1) High reliability. (TO-220) 10.0±0.3 0.1 4.5±0.3 0.1 2.8±0.2 0.1 for●Structure (1) (2) (3) 2) Low noise. 3) Very fast switching . d
●Construction mendigens Silicon epitaxial planar 5.0±0.2 8.0±0.2 12.0±0.2 13.5MIN 15.0±0.4 0.2 8.0 ① 1.2 1.3 0.8 (1) (2) (3) ROHM : TO220FN ① Manufacture Date 0.7±0.1 0.05 2.6±0.5 ecom Des
●Absolute maximum ratings (Ta=25C) w Parameter Symbol Limits Unit Reverse voltage (repetitive peak) R e Reverse voltage (DC) Average rectified forward current (*1) VRM 430 V VR 400 V Io 20 A t N Forward current surge peak (60Hz/1cyc)(*1) IFSM 100 A Junction temperature Tj 150 C o Storage temperature Tstg 55 to 150 C N(*1)Business frequency, Rating of R-load, Tc=94CMAX.
●Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR trr Min. Typ. Max. - - 1.6 - - 10 - - 30 Unit Conditions V IF=20A μA VR=400V ns IF=0.5A,IR=1A Irr=0.25*IR © 2011 ROHM Co., Ltd.
