Datasheet4U Logo Datasheet4U.com

RF2001T4S - Fast Recovery Diode

Key Features

  • bility. (TO-220) 10.0±0.3 　　　 0.1 4.5±0.3 　　　 0.1 2.8±0.2 　　　 0.1 for.
  • Structure (1) (2) (3) 2) Low noise. 3) Very fast switching . d.
  • Construction mendigens Silicon epitaxial planar 5.0±0.2 8.0±0.2 12.0±0.2 13.5MIN 15.0±0.4 　 0.2 8.0 ① 1.2 1.3 0.8 (1) (2) (3) ROHM : TO220FN ① Manufacture Date 0.7±0.1 0.05 2.6±0.5 ecom Des.
  • Absolute maximum ratings (Ta=25C) w Parameter Symbol Limits Unit Reverse voltage (repetitive peak) R e Reverse voltage (DC) Average rectified forw.

📥 Download Datasheet

Datasheet Details

Part number RF2001T4S
Manufacturer ROHM
File Size 380.57 KB
Description Fast Recovery Diode
Datasheet download datasheet RF2001T4S Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RF2001 SAW Filter REYCONNS
RF2043 GENERAL PURPOSE AMPLIFIER RF Micro Devices
RF2044 GENERAL PURPOSE AMPLIFIER RF Micro Devices
RF2044A GENERAL PURPOSE AMPLIFIER RF Micro Devices
RF2045 GENERAL PURPOSE AMPLIFIER RF Micro Devices

Other Datasheets by ROHM

Part Number Description
RF2001T2D Fast Recovery Diode
RF2001T2DFH Fast Recovery Diode
RF2001T2DNZ Super Fast Recovery Diode
RF2001T3D Fast Recovery Diodes
RF2001T3DFH Fast Recovery Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Data Sheet Fast recovery diode RF2001T4S Applications General rectification  Dimensions (Unit : mm) Features 1) High reliability. (TO-220) 10.0±0.3 　　　 0.1 4.5±0.3 　　　 0.1 2.8±0.2 　　　 0.1 for Structure (1) (2) (3) 2) Low noise. 3) Very fast switching . d Construction mendigens Silicon epitaxial planar 5.0±0.2 8.0±0.2 12.0±0.2 13.5MIN 15.0±0.4 　 0.2 8.0 ① 1.2 1.3 0.8 (1) (2) (3) ROHM : TO220FN ① Manufacture Date 0.7±0.1 0.05 2.6±0.