Power mold type. （CPD） 2)High switching speed 3)Low Reverse current
(1) CPD.
Structure.
Construction Silicon epitaxial planar
Production month
(1).
Taping dimensions（Unit : mm）
3.0 2.0
6.0
(2)
(3).
Absolute maximum ratings（Tc=25 C） Parameter Symbol Repetitive peak Reverse voltage Reverse voltage Average rectified forward current Forward current surge peak Junction temperature Storage temperature VRM VR Io IFSM Tj Tstg
Conditions Duty0.5 Direct voltage
60Hz half si.
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Super Fast Recovery Diode
RF505B6S
Series Standard Fast Recovery Dimensions（Unit : mm） Land size figure (Unit : mm)
6.0
Applications General rectification
(2) 1.6 1.6 (3) 2.3 2.3
Features 1)Power mold type.（CPD） 2)High switching speed 3)Low Reverse current
(1) CPD
Structure
Construction Silicon epitaxial planar
Production month
(1)
Taping dimensions（Unit : mm）
3.0 2.0
6.0
(2)
(3)
Absolute maximum ratings（Tc=25 C） Parameter Symbol Repetitive peak Reverse voltage Reverse voltage Average rectified forward current Forward current surge peak Junction temperature Storage temperature VRM VR Io IFSM Tj Tstg
Conditions Duty0.
RF505B6S Datasheet
