ROHM Semiconductor RF505B6S
Super Fast Recovery Diode
| Part No. | RF505B6S |
|---|---|
| Datasheet | RF505B6S Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Super Fast Recovery Diode |
| Buy | Stock & Price |
APPLICATIONS
General rectification (2) 1.6 1.6 (3) 2.3 2.3●
FEATURES
1)Power mold type.（CPD） 2)High switching speed 3)Low Reverse current (1) CPD● Structure
● Construction Silicon epitaxial planar Production month (1)
● Taping dimensions（Unit : mm） 3.0 2.0 6.0 (2) (3)
● Absolute maximum ratings（Tc=25 C） Parameter Symbol Repetitive peak Reverse voltage Reverse voltage Average rectified forward current Forward current surge peak Junction temperature Storage temperature VRM VR Io IFSM Tj Tstg Conditions Duty0.5 Direct voltage 60Hz half sin wave,resistive load Tc=42 C Limits 600 600 5 50 150 -55to+150 Unit V V A A C C 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25 C
● Electrical characteristics（Tj=25 C） Parameter Symbol Forward voltage Reverse current Reverse recovery time Thermal resistance VF IR trr Rth(j-l) Conditions IF=5.0A VR=600V IF=0.5A,IR=1A,Irr=0.25×IR junction to lead Min. - Typ. 1.3 0.05 22 － Max. 1.7 10 30 12 Unit V μA ns C/W ©2010 ROHM Co., Ltd. All rights reserved.
