ROHM Semiconductor RFN10BM3S
Super Fast Recovery Diode
| Part No. | RFN10BM3S |
|---|---|
| Datasheet | RFN10BM3S Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Super Fast Recovery Diode |
| Buy | Stock & Price |
FEATURES
1) Low switching loss 2) High current overload capacity ROHM : TO-252 JEITA : SC-63 1 : Manufacture Date●Construction Silicon epitaxial planar type
●Taping Dimensions (Unit : mm) 2.0±0.05 4.0±0.1 8.0±0.1 TO-252 2.3 2.3
●Structure Cathode φ1.55±0.1 1. 5 5 00.1 Anode Anode 0.4±0.1 2.5±0.1 TL 10.1±0.1 16.0±0.2 10.1±0.1 13.5±0.2 7.5±0.05 0～0.5 6.8±0.1 8.0±0.1 φ3.30.00±.10.1 2.7±0.2
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ABSOLUTE MAXIMUM RATINGS
(Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 350 V Reverse voltage VR Direct voltage 350 V Average rectified foward current Forward current surge peak Io IFSM 60Hz half sin wave , Resistive load Tc=34°C 60Hz half sin wave ,Non-repetitive at Tj=25°C() 10 80 A A Operating junction temperature Tj - 150 °C Storage temperature Tstg●
ELECTRICAL CHARACTERISTICS
(Tj = 25°C) Parameter Symbol Conditions 55 to 150 °C ()1-3pin commom circuit Min. Typ. Max. Unit Forward voltage VF IF=10A - 1.25 1.5 V Reverse current IR VR=350V - 0.05 10 A Reverse recovery time trr IF=0.5A, IR=1A, Irr=0.25×IR - 22 30 ns Thermal resistance Rth(j-c) Junction to case - - 6.0 °C / W © 2015 ROHM Co.
