ROHM Semiconductor RFN10BM3SFH
Super Fast Recovery Diode
| Part No. | RFN10BM3SFH |
|---|---|
| Datasheet | RFN10BM3SFH Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Super Fast Recovery Diode |
| Buy | Stock & Price |
FEATURES
1) Low switching loss 2) High current overload capacity ROHM : TO-252 JEITA : SC-63 1 : Manufacture Date●Construction Silicon epitaxial planar type
●Taping Dimensions (Unit : mm) 1.6 1.6 TO-252 2.3 2.3
●Structure Cathode Anode Anode
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ABSOLUTE MAXIMUM RATINGS
(Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 350 V Reverse voltage VR Direct voltage 350 V Average rectified foward current Io 60Hz half sin wave , Resistive load Tc=34°C 10 A Forward current surge peak IFSM 60Hz half sin wave ,Non-repetitive at Tj=25°C() 80 A Operating junction temperature Tj - 150 °C Storage temperature Tstg●
ELECTRICAL CHARACTERISTICS
(Tj = 25°C) - 55 to 150 °C ()1-3pin commom circuit Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage Reverse current Reverse recovery time VF IF=10A - 1.25 1.5 V IR VR=350V - 0.05 10 A trr IF=0.5A, IR=1A, Irr=0.25×IR - 22 30 ns Thermal resistance Rth(j-c) Junction to case - - 6.0 °C / W © 2016 ROHM Co., Ltd.
