Datasheet4U Logo Datasheet4U.com

RFN10BM3SFH - Super Fast Recovery Diode

Key Features

  • 1) Low switching loss 2) High current overload capacity ROHM : TO-252 JEITA : SC-63 1 : Manufacture Date.
  • Construction Silicon epitaxial planar type.
  • Taping Dimensions (Unit : mm) 1.6 1.6 TO-252 2.3 2.3.
  • Structure Cathode Anode Anode.
  • Absolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 350 V Reverse voltage VR Direct voltage 350 V Average rectified foward current Io 60Hz half sin wave.

📥 Download Datasheet

Datasheet Details

Part number RFN10BM3SFH
Manufacturer ROHM
File Size 1.22 MB
Description Super Fast Recovery Diode
Datasheet download datasheet RFN10BM3SFH Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RFN6BM2D Ultrafast Rectifier INCHANGE
RFNL5TJ6S Ultrafast Rectifier INCHANGE

Other Datasheets by ROHM

Part Number Description
RFN10BM3S Super Fast Recovery Diode
RFN10BM6S Super Fast Recovery Diode
RFN10BM6SFH Super Fast Recovery Diode
RFN10NS3S Super Fast Recovery Diode
RFN10NS4SFH Super Fast Recovery Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Super Fast Recovery Diode RFN10BM3SFH Datasheet Series Standard Fast Recovery Dimensions (Unit : mm) AEC-Q101 Qualified Land Size Figure (Unit : mm) 6.0 3.0 2.0 6.0 Application General rectification 1 Features 1) Low switching loss 2) High current overload capacity ROHM : TO-252 JEITA : SC-63 1 : Manufacture Date Construction Silicon epitaxial planar type Taping Dimensions (Unit : mm) 1.6 1.6 TO-252 2.3 2.3 Structure Cathode Anode Anode Absolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.