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RFN10NS3S - Super Fast Recovery Diode

Key Features

  • 1)Low switching loss 2)High current overload capacity 3)Cathode common single type ROHM : LPDS JEITA : TO263S lStructure ② lConstruction Silicon epitaxial planer ① Manufacture Year, Week and Day ① ③ lTaping dimensions (Unit : mm) lAbsolute maximum ratings (Tc=25C) Parameter Symbol VRM Repetitive peak reverse voltage VR Reverse voltage Average rectified forward current Io Forward current surge peak Junction temperature Storage temperature (.
  • ) 1-3pin common circuit lElectrical charac.

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Datasheet Details

Part number RFN10NS3S
Manufacturer ROHM
File Size 520.56 KB
Description Super Fast Recovery Diode
Datasheet download datasheet RFN10NS3S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet Super Fast Recovery Diode RFN10NS3S lSeries Standard Fast Recovery lDimensions (Unit : mm) lLand size figure (Unit : mm) lApplications General rectification RFN10 NS3S ① lFeatures 1)Low switching loss 2)High current overload capacity 3)Cathode common single type ROHM : LPDS JEITA : TO263S lStructure ② lConstruction Silicon epitaxial planer ① Manufacture Year, Week and Day ① ③ lTaping dimensions (Unit : mm) lAbsolute maximum ratings (Tc=25C) Parameter Symbol VRM Repetitive peak reverse voltage VR Reverse voltage Average rectified forward current Io Forward current surge peak Junction temperature Storage temperature (*) 1-3pin common circuit lElectrical characteristics (Tj=25C) Parameter Symbol VF Forward voltage Reverse current Reverse recovery time (*) IR trr IFSM