RFN10NS6S Datasheet | ROHM

Super Fast Recovery Diode RFN10NS6S z Serise Standard Fast Recovery z Dimensions(Unit : mm) z Applications General rectification RFN10 NS6S ձ z Features 1)Low switching loss 2)High current overload capacity z Construction Silicon epitaxial planer type ROHM : LPDS JEITA : TO263S ձ Manufacture Date z Taping Dimensions(Unit : mm) Data Sheet z Land Size Figure(Unit : mm) LPDS z Structure 㼟 z Absolu䡐e Maximum Ratings(Tc=25°C) Parameter Repetitive peak reverse voltage Reverse voltage Average rectified foward current Forward current surge peak Junction temperature Symbol VRM VR Io IFSM Tj Storage temperature Tstg Conditions Duty䍺0.5 Direct voltage 60Hz half sin wave , Resistive load Tc=91°C 60Hz half sin wave , Non-repetitive at Tj=25°C (- 1) z Electrical Characteristics(Tj=25°C) Parameter Symbol Conditions Min. Forward voltage Reverse current Reverse recovery time Thermal resistance IF=10A 䠉 VR=600V 䠉 trr IF=0.5A,IR=1A,Irr=0.25×IR 䠉 Rth(j-c) Junction to case 䠉 Limits Unit °C 55 to 150 °C (- 1) 1-3pin mon circuit Typ. 1.25 0.05 30...