1) Ultra small mold typë́HMD12ͅ 2) Low high-frequency forward resistance (rF) / low capacitance (CT). z Structure
z Taping specifications (Unit : mm)
z Absolute maximum ratings (Ta=25qC) Parameter Symbol Reverse voltage (DC) VR Forward current(DC) IF Junction temperature Tj Storage temperature Tstg z Electrical characteristic (Ta=25qC)
Parameter Forward voltage Reverse current Capacitance between terminals Forward resistance Symbol VF IR Ct Rf Rf Min. Typ. -
Limits 30 50 150.
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RN142ZS12A
Diodes
PIN Diode
RN142ZS12A
z Applications High frequency switching z Dimensions (Unit : mm)
z Construction Silicon epitaxial planar
z Land size figure (Unit : mm)
z Features 1) Ultra small mold typë́HMD12ͅ 2) Low high-frequency forward resistance (rF) / low capacitance (CT).
z Structure
z Taping specifications (Unit : mm)
z Absolute maximum ratings (Ta=25qC) Parameter Symbol Reverse voltage (DC) VR Forward current(DC) IF Junction temperature Tj Storage temperature Tstg z Electrical characteristic (Ta=25qC)
Parameter Forward voltage Reverse current Capacitance between terminals Forward resistance Symbol VF IR Ct Rf Rf Min. Typ. -
Limits 30 50 150 -55 to +150
Unit V mA
Max. 1.0 0.1 0.45 1.5 2.