RS1E321GN
RS1E321GN is Nch 30V 80A Power MOSFET manufactured by ROHM.
Nch 30V 80A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
30V 2.1mΩ ±80A 34W l Features
1) Low on
- resistance 2) High power package (HSOP8) 3) Pb-free plating ; Ro HS pliant 4) Halogen free 5) 100% Rg and UIS tested l Outline
HSOP8 l Inner circuit l Packaging specifications Packing
Reel size (mm) l Application Switching
Type Tape width (mm) Quantity (pcs)
Taping code
Marking l Absolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Drain
- Source voltage
Continuous drain current
Pulsed drain current Gate
- Source voltage Avalanche current, single pulse Avalanche energy, single pulse
Tc = 25°C Ta = 25°C
Power dissipation
Junction temperature Operating junction and storage temperature range
VDSS ID- 1 ID IDP- 2 VGSS IAS- 3 EAS- 3 PD- 1 PD- 4 Tj Tstg
30 ±80 ±32 ±128 ±20 32 77 34 3.0 150 -55 to +150
Embossed Tape 330 12 2500 TB1
Unit V A A A V A m J W W
℃ ℃
.rohm.
© 2021 ROHM Co., Ltd. All rights reserved.
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- Rev.002
RS1E321GN l Thermal resistance
Parameter Thermal resistance, junction
- case Thermal resistance, junction
- ambient
Symbol
Rth JC- 1 Rth JA- 4
Values Unit
Min. Typ....
