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RSS085N05
Transistor
4V Drive Nch MOS FET
RSS085N05
Structure Silicon N-channel MOS FET External dimensions (Unit : mm)
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Features 1) Built-in G-S Protection Diode. 2) Small and Surface Mount Package (SOP8).
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Applications Power switching , DC / DC converter, Inverter
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Packaging dimensions
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Absolute maximum ratings (Ta=25 C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP *1 IS ISP *1 PD *2 Tch Tstg Limits 45 20 ±8.5 ±34 1.
RSS085N05 Datasheet
