RSX501L-20 Datasheet | ROHM

.. Diodes Schottky barrier diode RSX501L-20 z Applications General rectification z Dimensions (Unit : mm) z Land size figure (Unit : mm) 2.0 z Features 1) Small power mold type. (PMDS) 2) Low VF, Low IR. 3) High reliability. 2.6±0.2 ① ② 0.1±0.02 　　　 0.1 5.0±0.3 3 5 5 7 4.5±0.2 1.2±0.3 PMDS 1.5±0.2 2.0±0.2 z Structure z Construction Silicon epitaxial planar ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture Date z Taping specifications (Unit : mm) 2.0±0.05 4.0±0.1 φ1.55±0.05 1.75±0.1 0.3 5.5±0.05 φ1.55 2.9±0.1 4.0±0.1 2.8MAX z Absolute maximum ratings (Ta=25°C) Param eter Revers e voltage (repetitive peak) Revers e voltage (DC) Average rectified forward current Forward current s urge peak （ 60Hz- 1cyc ） Junction tem perature Storage tem perature Sym bol VRM VR Io IFSM Tj Ts tg Lim its 25 20 5 70 125 -40 to +125 Unit V V A A ℃ ℃ (- 1)Tc=90 ℃ m ax Mouinted on epoxy board. 180° Half s ine wave z Electrical characteristics (Ta=25°C) Parameter Symbol Min. VF Forward voltage IR Reverse current Typ. - Max. 0.39 500 Unit V µA IF=3.0A VR=20V 5.3±0.1 　 0.05 9.5±0.1 Conditions 12±0.2 Rev.D 1/3 Diodes z Electrical characteristic curves (Ta=25°C) 10 Ta=125℃ Ta=75℃ 1000000 Ta=125℃ Ta=25℃ CAPACITANCE BETWEEN TERMINALS:Ct(p F) 1 REVERSE CURRENT:IR(u A) FORWARD CURRENT:IF(A) 100000 10000 1000 100 Ta=-25℃ 10 1 0 100 200 300 400 500 600 0 5 10 15 20 25 30 FORWARD VOLTAGE：VF(m V) VF-IF CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 1000 f=1MHz Ta=75℃ Ta=25℃ Ta=-25℃...