RSX501LA-20 Datasheet | ROHM

.. Diodes Schottky barrier diode RSX501LA-20 z Applications General rectification z Features 1) Small and Thin power mold type (PMDT) 2) High reliability. 3) Low IR z External dimensions (Unit : mm) z Land size figure (Unit : mm) 2.0 1.4 z Structure Silicon epitaxial planar ROHM : PMDＴ PMDＴ z Structure z Taping dimensions (Unit : mm) 2.0±0.05 4.0±0.1 φ1.55±0.1 　　　　　 0 0.25±0.05 1.75±0.1 5.5±0.05 12.0±0.2 φ1.55±0.1 　　　　　 0 2.7±0.1 4.0±0.1 1.25±0.1 z Absolute maximum ratings (Ta=25°C) Parameter Limits Symbol Reverse voltage (repetitive peak) 25 VRM Reverse voltage (DC) VR 20 Average rectified forward current (- 1) 5.0 Io Forward current surge peak （60Hz- 1cyc） 70 IFSM Junction temperature 125 Tj Storage temperature -40 to +125 Tstg (- 1) Alumina substrate at the time of assemble, Tc=90℃ max. z Electrical characteristic (Ta=25°C) 5.0±0.1 Unit V V A A ℃ ℃ Parameter Forward voltage Reverse current Symbol VF IR Min. - Typ. - Max. 0.39 500 Unit V µA Conditions IF=3.0A VR=20V 5.0±0.1 1/3 Diodes z Electrical characteristic curves Ta=125℃ Ta=75℃ 1000000 Ta=125℃ 100000 REVERSE CURRENT:IR(u A) 1000 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(p F) FORWARD CURRENT:IF(A) Ta=25℃ 10000 1000 100 Ta=75℃ Ta=-25℃ Ta=25℃ Ta=-25℃ 10...