1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive
lInner circuit
(D)
(G) (S)
(G) Gate (D) Drain (S) Source.
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S2301
N-channel SiC power MOSFET bare die
VDSS RDS(on) (Typ.
S2301 Datasheet
