ROHM Semiconductor S2303
N-channel SiC power MOSFET
| Part No. | S2303 |
|---|---|
| Datasheet | S2303 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | N-channel SiC power MOSFET |
| Buy | Stock & Price |
FEATURES
1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive●Inner circuit (1) (2) *1 (3) (1) Gate (2) Drain (3) Source *1 Body Diode
●Application
●Solar inverters
●DC/DC converters
●Switch mode power supplies
●Induction heating
●Motor drives
●Absolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Tc = 25°C Gate - Source voltage (DC) Gate - Source surge voltage (tsurge < 300nsec) Junction temperature Range of storage temperature Symbol VDSS ID *1 ID,pulse *2 VGSS VGSS_surge*3 Tj Tstg Value 1200 40 140 6 to 22 10 to 26 175 55 to 175 Unit V A A V V °C °C © 2017 ROHM Co., Ltd. All rights reserved. 1/11 2017.04 - Rev.A S2303 Datasheet
●Electrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA 1200 - -V Zero gate voltage drain current Gate - Source leakage current Gate - Sou...
