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S6202 - SiC Schottky Barrier Diode Bare Die

Datasheet Summary

Features

  • 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lInner circuit (C) (A) Data Sheet (C) Cathode (A) Anode lConstruction Silicon carbide epitaxial planer type Schottky diode lAbsolute maximum ratings (Tj = 25°C) Parameter Symbol Value Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Surge no repetitive forward current Repetitive peak forward current Junction temperature VRM 650 VR 650 IF 10.
  • 1 40.
  • 2 IFSM.

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Datasheet Details

Part number S6202
Manufacturer ROHM
File Size 329.31 KB
Description SiC Schottky Barrier Diode Bare Die
Datasheet download datasheet S6202 Datasheet
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Full PDF Text Transcription

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S6202 SiC Schottky Barrier Diode Bare Die VR 650V IF 10A*1 QC 15nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lInner circuit (C) (A) Data Sheet (C) Cathode (A) Anode lConstruction Silicon carbide epitaxial planer type Schottky diode lAbsolute maximum ratings (Tj = 25°C) Parameter Symbol Value Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Surge no repetitive forward current Repetitive peak forward current Junction temperature VRM 650 VR 650 IF 10*1 40*2 IFSM 150*3 31*4 IFRM 41*5 Tj 175 Range of storage temperature Tstg -55 to +175 *1 Limited by Tj *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ms square, Tj=25°C *4 PW=8.
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