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S6207 - SiC Schottky Barrier Diode Bare Die

Datasheet Summary

Features

  • 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lInner circuit (C) (A) lConstruction Silicon carbide epitaxial planer type Schottky diode Data Sheet (C) Cathode (A) Anode lAbsolute maximum ratings (Tj = 25°C) Parameter Symbol Value Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Surge no repetitive forward current Repetitive peak forward current Junction temperature VRM 650 VR 650 IF 15.
  • 1 55.
  • 2 IFSM.

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Datasheet preview – S6207

Datasheet Details

Part number S6207
Manufacturer ROHM
File Size 329.59 KB
Description SiC Schottky Barrier Diode Bare Die
Datasheet download datasheet S6207 Datasheet
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Full PDF Text Transcription

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S6207 SiC Schottky Barrier Diode Bare Die VR 650V IF 15A*1 QC 23nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lInner circuit (C) (A) lConstruction Silicon carbide epitaxial planer type Schottky diode Data Sheet (C) Cathode (A) Anode lAbsolute maximum ratings (Tj = 25°C) Parameter Symbol Value Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Surge no repetitive forward current Repetitive peak forward current Junction temperature VRM 650 VR 650 IF 15*1 55*2 IFSM 200*3 43*4 IFRM 61*5 Tj 175 Range of storage temperature Tstg -55 to +175 *1 Limited by Tj *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ms square, Tj=25°C *4 PW=8.
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