SCS215AE Datasheet PDF

SCS215AE SiC Schottky Barrier Diode lOutline Data Sheet VR IF QC lFeatures 1) Shorter recovery time 650V 15A 23nC TO-247 (1) (2) (3) lInner circuit 2) Reduced temperature dependence 3) High-speed switching possible (1) N/C (2) Cathode (3) Anode (1) (2) (3) lPackaging specifications Packaging lConstruction Silicon carbide epitaxial planer Shottoky Diode Type Basic ordering unit (pcs) Taping code Marking lAbsolute maximum ratings (Tj = 25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Symbol VRM VR IF Value 650 650 15* 55* Surge no repetitive forward current IFSM 1 2 3 Tube 30 C SCS215AE Reel size (mm) Tape width (mm) Unit V V A A A A A W °C °C 200* 43* 4 Repetitive peak forward current Total power disspation Junction temperature Range of storage temperature IFRM PD Tj Tstg 61*5 110* 175 -55 to +175 6 *1 Tc=130°C *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ms square, Tj=25°C *4 PW=8.3ms sinusoidal, Tj=150°C *5 Tc=100°C, Tj=150°C, Duty cycle=10% *6 Tc=25°C © 2014 ROHM Co., Ltd.