SCS215AJ Datasheet PDF

SCS215AJ SiC Schottky Barrier Diode lOutline Data Sheet VR IF QC lFeatures 1) Shorter recovery time 650V 15A 23nC LPT(L) <TO-263AB> (1) (2) (3) (4) lInner circuit (1) 2) Reduced temperature dependence 3) High-speed switching possible (1) Cathode (2) N / C (3) Cathode (4) Anode (2) (3) (4) lPackaging specifications Packaging lConstruction Silicon carbide epitaxial planer Shottoky Diode Type Basic ordering unit (pcs) Taping code Marking lAbsolute maximum ratings (Tj = 25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Symbol VRM VR IF Value 650 650 15* 55* Surge no repetitive forward current IFSM 1 2 3 Embossed tape Reel size (mm) Tape width (mm) 330 24 1,000 TLL SCS215AJ Unit V V A A A A A W °C °C 200* 43* 4 Repetitive peak forward current Total power dissipation Junction temperature Range of storage temperature IFRM PD Tj Tstg 56*5 100* 175 -55 to +175 6 *1 Tc=120°C *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ms square, Tj=25°C *4 PW=8.3ms sinusoidal, Tj=150°C *5 Tc=100°C, Tj=150°C, Duty cycle=10% *6 Tc=25°C © 2014 ROHM Co., Ltd.