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4V Drive Pch+Pch MOSFET
SH8J65
Structure Silicon P-channel MOSFET
Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8).
Application Switching
Dimensions (Unit : mm)
SOP8
Each lead has same dimensions
Packaging specifications
Type
Package Code Basic ordering unit (pieces)
SH8J65
Taping TB 2500
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage
Drain current
Source current (Body diode)
Total power dissipation
Continuous Pulsed Continuous Pulsed
Channel temperature
Range of Storage temperature
∗1 Pw≤10μs, Duty cycle≤1% ∗2 Mounted on a ceramic board
Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1
PD ∗2
Tch Tstg
Limits −30 ±20 ±7.0 ±28 −1.6 −28 2.0 1.