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SH8J65 - 4V Drive Pch+Pch MOSFET

Features

  • 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8).

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Datasheet Details

Part number SH8J65
Manufacturer ROHM
File Size 152.09 KB
Description 4V Drive Pch+Pch MOSFET
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4V Drive Pch+Pch MOSFET SH8J65 Structure Silicon P-channel MOSFET Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Switching Dimensions (Unit : mm) SOP8 Each lead has same dimensions Packaging specifications Type Package Code Basic ordering unit (pieces) SH8J65 Taping TB 2500 Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Continuous Pulsed Continuous Pulsed Channel temperature Range of Storage temperature ∗1 Pw≤10μs, Duty cycle≤1% ∗2 Mounted on a ceramic board Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits −30 ±20 ±7.0 ±28 −1.6 −28 2.0 1.
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