Click to expand full text
4V Drive Nch+Nch MOSFET
SH8K22
Structure Silicon N-channel MOSFET
Features 1) Built-in G-S Protection Diode. 2) Small surface Mount Package (SOP8).
Application Power switching, DC / DC converter, Inverter
Dimensions (Unit : mm)
SOP8
Each lead has same dimensions
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
SH8K22
Taping TB 2500
Absolute maximum ratings (Ta=25C)
Parameter
Symbol Limits
Unit
Drain-source voltage Gate-source voltage
Drain current
Source current (Body diode)
Continuous Pulsed Continuous Pulsed
Total power dissipation
Chanel temperature Range of Storage temperature *1 PW 10s、Duty cycle 1
VDSS
45
V
VGSS
±20
V
ID ±4.