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SIR-320ST3F - Infrared light emitting diode

Key Features

  • 1) Compact (φ3.1 mm). 2) High efficiency, high output PO = 9.0 mW (IF = 50 mA). 3) Wide radiation angle θ = ±18_. 4) Emission spectrum well suited to silicon detectors (λP = 940 nm). 5) Good current-optical output linearity. 6) Long life, high reliability. 7) Low cost, clear epoxy resin package. FAbsolute maximum ratings (Ta = 25_C) 168 Sensors FElectrical and optical characteristics (Ta = 25_C) SIR-320ST3F FElectrical and optical characteristic curves 169 Sensors FDirectional pattern SI.

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Datasheet Details

Part number SIR-320ST3F
Manufacturer ROHM
File Size 68.58 KB
Description Infrared light emitting diode
Datasheet download datasheet SIR-320ST3F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Sensors Infrared light emitting diode, top view type SIR-320ST3F The SIR-320ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940 nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle, making it ideal for compact optical control equipment. FApplications Optical control equipment Light source for remote control devices FExternal dimensions (Units: mm) FFeatures 1) Compact (φ3.1 mm). 2) High efficiency, high output PO = 9.0 mW (IF = 50 mA). 3) Wide radiation angle θ = ±18_. 4) Emission spectrum well suited to silicon detectors (λP = 940 nm). 5) Good current-optical output linearity. 6) Long life, high reliability. 7) Low cost, clear epoxy resin package.