SP8M2 Description
SP8M2 Transistors 4V Drive Nch+Pch MOS FET SP8M2 zStructure Silicon N-channel MOS FET / Silicon P-channel MOS FET zExternal dimensions (Unit : Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 P D ∗2 Tch Tstg Continuous Pulsed Continuous Pulsed Limits Tr1 : zFeatures 1) Low on-resistance.
SP8M2 Key Features
- 59 93 107
- 140 45 30 6 6 17 4 2.5 0.8 0.8
- 1 2.5 83 130 150
- Max. 1.2
- Gate-source leakage Drain-source breakdown voltage V(BR) DSS -30 IDSS Zero gate voltage drain current
- VGS (th) -1.0 Gate threshold voltage
- Static drain-source on-state RDS (on)∗
- resistance
- Yfs ∗ 1.8 Forward transfer admittance Ciss
- Input capacitance Coss Output capacitance