SP8M21 Description
SP8M21 Transistors 4V Drive Nch+Pch MOSFET SP8M21 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions (Unit : Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Continuous Pulsed Continuous Pulsed Limits Tr1 : zFeatures 1) Low on-resistance.
SP8M21 Key Features
- 18 24 26
- 1400 310 175 19 30 72 27 15.4 3.7 6.5
- 1 2.5 25 34 37
- Max. 1.2
- Gate-source leakage Drain-source breakdown voltage V(BR) DSS -45 Zero gate voltage drain current
- IDSS Gate threshold voltage VGS (th) -1.0
- Static drain-source on-state
- RDS (on)∗ resistance
- Yfs ∗ 6.0 Forward transfer admittance
- Ciss Input capacitance Output capacitance Coss