TT8M1 - MOSFET

ROHM

Key Features

1) Low on-resistance. 2) High power package (TSST8). 3) Low voltage drive (1.5V drive).
Dimensions (Unit : mm) TSST8 (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol :M01.

TT8M1 mosfet by ROHM - Datasheet Preview

Datasheet Details

Part number	TT8M1
Manufacturer	ROHM
File Size	459.18 KB
Description	MOSFET
Datasheet	TT8M1 Datasheet

More Datasheets from ROHM

Part Number	Description
TT8M11	MOSFET
TT8M2	MOSFET
TT8M3	MOSFET
TT8J1	MOSFET
TT8J11	MOSFET
TT8J13	MOSFET
TT8J2	MOSFET
TT8J21	MOSFET
TT8K1	MOSFET
TT8K11	MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

1.5V Drive Nch + Pch MOSFET TT8M1  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Features 1) Low on-resistance. 2) High power package (TSST8). 3) Low voltage drive (1.5V drive).  Dimensions (Unit : mm) TSST8 (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol :M01  Application Switching  Packaging specifications Type TT8M1 Package Taping Code TR Basic ordering unit (pieces) 3000   Inner circuit  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Symbol VDSS VGSS Limits Tr1 : N-ch Tr2 : P-ch www.DataSheet.co.