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AS081C320W - High Power Stacked Infrared Laser Diode Array

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Part number AS081C320W
Manufacturer Roithner
File Size 112.41 KB
Description High Power Stacked Infrared Laser Diode Array
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AS081C320W TECHNICAL DATA High Power Stacked Infrared Laser Diode Array Features Applications • Output Power: 320 W • Laser Pumping • 780-830 nm Emission Wavelength • Medical Usage • Spectral Width: ≤4 nm • High power laser diode applications • High Reliability, High Efficiency • CW stack arrays adopt micro-channel package Specifications (25°C) Item Optical Specifications CW Output Power Output Power / Bar Array Length Center Wavelength Wavelength Tolerance Spectral Width Package Style Bar Length Number of Bars Wavelength Temperature Coefficient Beam Divergence Electrical Specifications Slope Efficiency Conversion Efficiency Threshold Current Operating Current Operating Voltage Absolute Maximum Ratings Reverse Voltage Operating Temperature Storage Temperature Symbol PO PS L λ
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