Click to expand full text
RLT790-80MGS
TECHNICAL DATA
High Power Infrared Laser Diode
Features
• • • • Lasing Mode Structure: single mode Peak Wavelength : typ. 790 nm Optical Output Power: 80 mW Package: 5.6 mm
Electrical Connection
Pin Configuration
n-type PIN 1 2 3 Function LD Anode LD Cathode, PD Anode PD Cathode
Bottom View
Absolute Maximum Ratings (TC=25°C)
Item CW Output Power Operating Case Temperature Storage Temperature Symbol PO TC Tstg Value 80 -10 … +60 -40 … +85 Unit mW °C °C
Specifications (TC=25°C)
Item Optical Specification CW Output Power Peak Wavelength Spectral Width (FWHM) FWHM Beam Divergence Emitting Aperature Chip Cavity Length Lifetime Electrical Specification Threshold Current Operating Current Slope Efficiency Operating Voltage Monitor Current Symbol PO λP Δλ θ║ θ┴ WxH Min. 780 Typ.
RLT790-80MGS Datasheet
