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RLT855-10MG
Features
• • • • •
Laser Diode Technical Data
ABSOLUTE MAXIMUM RATINGS ( Tc=25 oC ) DESCRIPTION
Optical Power (mW)
Operation Temperature (oC) Storage Temperature (oC) LD Reverse Voltage (V) PD Reverse Voltage (V)
SYMBOL
Po Top Tstg VLDR VPDR
RATED VALUE
5 -10 to +50 -40 to +85 2 30
Index Guided MQW Structure Wavelength : 855 nm (Typ.) Optical Power : 10 mW CW Threshold Current : 30 mA ( Typ. ) Package Style : TO-18 (5.6 mmØ)
OPTICAL AND ELECTRICAL CHARACTERISTICS ( Tc=25 oC ) DESCRIPTION
Lasing Wavelength (nm)
Threshold Current (mA) Operating Current (mA) Operating Voltage (V) Monitor Current (mA)
SYMBOL
λp Ith Iop Vop Im η θ⎪⎢ θ⊥ As
MIN.
850 20 25 1.8 0.1 0.5 8 25 *
TYPICAL
855 30 45 2.0 0.45 0.7 10 30 11
MAX.
895 50 55 2.5 0.75 0.
RLT855-10MG Datasheet
