RLT855-10MG Datasheet PDF

FEATURES

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● Laser Diode Technical Data

ABSOLUTE MAXIMUM RATINGS

( Tc=25 oC )

DESCRIPTION

Optical Power (mW) Operation Temperature (oC) Storage Temperature (oC) LD Reverse Voltage (V) PD Reverse Voltage (V) SYMBOL Po Top Tstg VLDR VPDR RATED VALUE 5 -10 to +50 -40 to +85 2 30 Index Guided MQW Structure Wavelength : 855 nm (Typ.) Optical Power : 10 mW CW Threshold Current : 30 mA ( Typ. ) Package Style : TO-18 (5.6 mmØ) OPTICAL AND

ELECTRICAL CHARACTERISTICS

( Tc=25 oC )

DESCRIPTION

Lasing Wavelength (nm) Threshold Current (mA) Operating Current (mA) Operating Voltage (V) Monitor Current (mA) SYMBOL λp Ith Iop Vop Im η θ⎪⎢ θ⊥ As MIN. 850 20 25 1.8 0.1 0.5 8 25 * TYPICAL 855 30 45 2.0 0.45 0.7 10 30 11 MAX. 895 50 55 2.5 0.75 0.9 12 40 * TEST CONDITION Po=10mW Po=10mW Po=10mW Po=10mW Po=10mW *** Po=10mW Po=10mW Po=10mW Slope Efficiency (mW/mA) Beam Divergence ⎪⎢ (°) Beam Divergence ⊥ (°) Astigmatism (μm) Bankverbindung: Bank~Austria Creditanstalt AG - Bankleitzahl: 12000 - EURO Kon...