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S8410MG - Infrared Laser diode

Key Features

  • Lasing Mode Structure: multi mode.
  • Peak Wavelength : typ. 840 nm.
  • Optical Ouput Power: 10 mW.
  • Package: 5.6 mm Electrical Connection Pin Configuration PIN Function 1 LD Cathode 2 LD Anode 3 n. c. Bottom View Absolute Maximum Ratings (TC=20°C) Item CW Output Power LD Reverse Voltage Operating Case Temperature Storage Temperature Symbol PO Vr TC Tstg Value 10 2 -10 … +60 -15 … +85 Unit mW V °C °C Specifications (TC=20°C) Item Optical Specifications CW Outp.

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Datasheet Details

Part number S8410MG
Manufacturer Roithner
File Size 306.81 KB
Description Infrared Laser diode
Datasheet download datasheet S8410MG Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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S8410MG TECHNICAL DATA Infrared Laser Diode Features • Lasing Mode Structure: multi mode • Peak Wavelength : typ. 840 nm • Optical Ouput Power: 10 mW • Package: 5.6 mm Electrical Connection Pin Configuration PIN Function 1 LD Cathode 2 LD Anode 3 n.c. Bottom View Absolute Maximum Ratings (TC=20°C) Item CW Output Power LD Reverse Voltage Operating Case Temperature Storage Temperature Symbol PO Vr TC Tstg Value 10 2 -10 … +60 -15 … +85 Unit mW V °C °C Specifications (TC=20°C) Item Optical Specifications CW Output Power Center Wavelength FWHM Beam Divergence Electrical Specifications Threshold Current Operating Current Slope Efficiency Operating Voltage Symbol PO λC θ║ θ┴ Ith Iop η Uop Min. 830 - 0.7 - Typ. 10 840 10 35 17 28 0.95 1.7 Max. 850 - 23 38 2.