RU1HE12L
RU1HE12L is N-Channel Advanced Power MOSFET manufactured by Ruichips.
Features
- 100V/12A, RDS (ON) =145mΩ(Typ.)@VGS=10V RDS (ON) =160mΩ(Typ.)@VGS=4.5V
- Super High Dense Cell Design
- ESD protected
- Reliable and Rugged
- 100% avalanche tested
- Lead Free and Green Devices Available (Ro HS pliant)
Applications
- Converters
Pin Description
TO252
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter mon Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
③
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C
Rating
100 ±20 175 -55 to 175 12
①
②
12 8 40...
