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RU1HE12L - N-Channel Advanced Power MOSFET

Description

TO252 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat S

Features

  • 100V/12A, RDS (ON) =145mΩ(Typ. )@VGS=10V RDS (ON) =160mΩ(Typ. )@VGS=4.5V.
  • Super High Dense Cell Design.
  • ESD protected.
  • Reliable and Rugged.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant).

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Datasheet Details

Part number RU1HE12L
Manufacturer Ruichips
File Size 282.96 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU1HE12L Datasheet

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Full PDF Text Transcription

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RU1HE12L N-Channel Advanced Power MOSFET MOSFET Features • 100V/12A, RDS (ON) =145mΩ(Typ.)@VGS=10V RDS (ON) =160mΩ(Typ.)@VGS=4.
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