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RU1HE16L Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

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Datasheet Details

Part number RU1HE16L
Manufacturer Ruichips
File Size 289.88 KB
Description N-Channel Advanced Power MOSFET
Download RU1HE16L Download (PDF)

General Description

TO252 Applications • Power Management.

N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Rating 100 ±20 175 -55 to 175 16 ① 64 ② 16 11 50 25 3 70 Unit V °C °C A A A W °C/W m

Overview

RU1HE16L N-Channel Advanced Power MOSFET MOSFET.

Key Features

  • 100V/16A, RDS (ON) =70mΩ(Typ. )@VGS=10V RDS (ON) =85mΩ(Typ. )@VGS=4.5V.
  • Super High Dense Cell Design.
  • ESD protected.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

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