RU1Z200Q Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

RU1Z200Q n-channel advanced power mosfet by Ruichips - Datasheet Preview

Datasheet Details

Part number	RU1Z200Q
Manufacturer	Ruichips
File Size	398.68 KB
Description	N-Channel Advanced Power MOSFET
Download	RU1Z200Q Download (PDF)

General Description

G DS TO247 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS③ Avalanche Energy, Single Pulsed S N-Channel MOSFET Rating Unit TC=25°C 150 ±25 175 -55 to 175 200 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 800 A 200 A 141 600 W 300 0.25 °C/W 50 °C/W 900 mJ Ruichips Semiconductor Co., Ltd Rev.

C– SEP., 2014 1 www.ruichips.com RU1Z200Q Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU1Z200Q Min.

Typ.

Overview

RU1Z200Q N-Channel Advanced Power MOSFET.

Key Features

150V/200A, RDS (ON) =5.5mΩ(Typ. )@VGS=10V.
Ultra Low On-Resistance.
Exceptional dv/dt capability.
Fast Switching and Fully Avalanche Rated.
100% avalanche tested.
175°C Operating Temperature.
Lead Free and Green Devices Available (RoHS Compliant).

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