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RU2H50Q Datasheet N-channel Advanced Power MOSFET

Manufacturer: Ruichips

Overview: RU2H50Q N-Channel Advanced Power MOSFET MOSFET.

Datasheet Details

Part number RU2H50Q
Manufacturer Ruichips
File Size 273.58 KB
Description N-Channel Advanced Power MOSFET
Datasheet RU2H50Q-Ruichips.pdf

General Description

TO-247 Applications • Switching Application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev.

C– FEB., 2012 Rating 200 ±25 175 -55 to 175 60 ① 230 ② 60 ② 45 326 163 0.46 Unit V °C °C A A A W °C/W 157 mJ www.ruichips.com RU2H50Q Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU2H50Q Unit Min.

Typ.

Key Features

  • 200V/60A, RDS (ON) =34mΩ (Type) @ VGS=10V.
  • Low Gate Charge.
  • Fast Switching.
  • 100% avalanche tested.
  • 175°C Operating Temperature.
  • Lead Free,RoHS compliant Pin.

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