RU2H50R - N-Channel MOSFET

Features

Static drain-source on-resistance: RDS(on) ≤43mΩ.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	RU2H50R
Manufacturer	INCHANGE
File Size	246.41 KB
Description	N-Channel MOSFET
Datasheet	RU2H50R Datasheet
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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤43mΩ ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±25 ID Drain Current-Continuous 60 IDM Drain Current-Single Pulsed 230 PD Total Dissipation @TC=25℃ 312 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.48 UNIT ℃/W RU2H50R isc website：www.iscsemi.

Published: Nov 27, 2020 |