RU2H50S Description
TO-263 Applications Switching Application N-Channel MOSFET Ratings Symbol Parameter mon Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC -Junction to...
RU2H50S Key Features
- 200V/60A, RDS (ON) =36mΩ (Type) @ VGS=10V
- Low Gate Charge
- Fast Switching
- 100% avalanche tested
- 175°C Operating Temperature
- Lead Free,RoHS pliant