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RU2H50S - N-Channel Advanced Power MOSFET

Datasheet Summary

Description

TO-263 Applications Switching Application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Cont

Features

  • 200V/60A, RDS (ON) =36mΩ (Type) @ VGS=10V.
  • Low Gate Charge.
  • Fast Switching.
  • 100% avalanche tested.
  • 175°C Operating Temperature.
  • Lead Free,RoHS compliant Pin.

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Datasheet Details

Part number RU2H50S
Manufacturer Ruichips
File Size 275.13 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU2H50S Datasheet
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RU2H50S N-Channel Advanced Power MOSFET MOSFET Features • 200V/60A, RDS (ON) =36mΩ (Type) @ VGS=10V • Low Gate Charge • Fast Switching • 100% avalanche tested • 175°C Operating Temperature • Lead Free,RoHS compliant Pin Description TO-263 Applications • Switching Application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=
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