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RU3013H Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

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Datasheet Details

Part number RU3013H
Manufacturer Ruichips
File Size 278.31 KB
Description N-Channel Advanced Power MOSFET
Download RU3013H Download (PDF)

General Description

SOP-8 Applications • SMPS Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID PD ② RθJA Continuous Drain Current(VGS=10V) TA=25°C TA=70°C Maximum Power Dissipation TA=25°C TA=70°C Thermal Resistance-Junction to Ambient Rating 30 ±20 150 -55 to 150 4 ① 40 11 8 3.1 2 40 Unit V °C °C A A A W °C/W Copyright© Ruichips Semiconductor Co., Ltd Rev.

B– OCT., 2012 www.ruichips.com RU3013H Electrical Characteristics (TA=2

Overview

RU3013H N-Channel Advanced Power MOSFET MOSFET.

Key Features

  • 30V/11A, RDS (ON) =16mΩ (Typ. ) @ VGS=10V RDS (ON) =24mΩ (Typ. ) @ VGS=4.5V.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • Lead Free and Green Available Pin.

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