RU3070L Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

RU3070L n-channel advanced power mosfet by Ruichips - Datasheet Preview

Datasheet Details

Part number	RU3070L
Manufacturer	Ruichips
File Size	313.51 KB
Description	N-Channel Advanced Power MOSFET
Download	RU3070L Download (PDF)

General Description

D G S TO252 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed S N-Channel MOSFET Rating Unit TC=25°C 30 ±20 175 -55 to 175 70 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 280 A 70 A 49 71 W 36 2.1 °C/W 100 °C/W 196 mJ Ruichips Semiconductor Co., Ltd Rev.

A– JUL., 2013 1 www.ruichips.com RU3070L Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU3070L Min.

Typ.

Overview

RU3070L N-Channel Advanced Power MOSFET.

Key Features

30V/70A, RDS (ON) =3.3mΩ(Typ. )@VGS=10V RDS (ON) =5mΩ(Typ. )@VGS=4.5V.
Super High Dense Cell Design.
Ultra Low On-Resistance.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant).

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