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RU30C30M - N-Channel Advanced Power MOSFET

Description

D1 D1D2D2 S1 G1 S2 G2 pin1 PDFN5060 Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Lar

Features

  • N-Channel 30V/30A, RDS (ON) =7.5mΩ(Typ. ) @ VGS=10V RDS (ON) =10mΩ(Typ. ) @ VGS=4.5V.
  • P-Channel -30V/-30A, RDS (ON) =13mΩ (Typ. ) @ VGS=-10V RDS (ON) =22mΩ (Typ. ) @ VGS=-4.5V.
  • Fast Switching Speed.
  • ESD Protected.
  • Low gate Charge.
  • Lead Free and Green Devices Available (RoHS Compliant).

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Datasheet Details

Part number RU30C30M
Manufacturer Ruichips
File Size 422.22 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU30C30M Datasheet

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Full PDF Text Transcription

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RU30C30M Complementary Advanced Power MOSFET Features • N-Channel 30V/30A, RDS (ON) =7.5mΩ(Typ.) @ VGS=10V RDS (ON) =10mΩ(Typ.) @ VGS=4.5V • P-Channel -30V/-30A, RDS (ON) =13mΩ (Typ.) @ VGS=-10V RDS (ON) =22mΩ (Typ.) @ VGS=-4.
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