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RU30D20H - N-Channel Advanced Power MOSFET

Description

30V/20A, RDS (ON) =10mΩ(Typ.)@VGS=10V RDS (ON) =12mΩ(Typ.)@VGS=4.5V Fast Switching Speed Low gate Charge D2 D2 D1 D1 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) G2 S2 Applications Switching Application

Features

  • Pin.

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Datasheet Details

Part number RU30D20H
Manufacturer Ruichips
File Size 464.19 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU30D20H Datasheet

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Full PDF Text Transcription

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sales.Mr.wang13826508770 www.sztssd.com RU30D20H N-Channel Advanced Power MOSFET Features Pin Description • 30V/20A, RDS (ON) =10mΩ(Typ.)@VGS=10V RDS (ON) =12mΩ(Typ.)@VGS=4.5V • Fast Switching Speed • Low gate Charge D2 D2 D1 D1 • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) G2 S2 Applications • Switching Application Systems G1 pin1 S1 ySOP-8 OnlD1 D2 UseG1 G2 Absolute Maximum Ratings Symbol times Parameter g Common Ratings (TA=25°C Unless Otherwise Noted) n VDSS Drain-Source Voltage he VGSS Gate-Source Voltage gs TJ Maximum Junction Temperature n TSTG Storage Temperature Range To IS Diode Continuous Forward Current Mounted on Large Heat Sink For IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=4.
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