Datasheet Details
| Part number | RU30D20H |
|---|---|
| Manufacturer | Ruichips |
| File Size | 464.19 KB |
| Description | N-Channel Advanced Power MOSFET |
| Datasheet |
 RU30D20H Datasheet
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| Part number | RU30D20H |
|---|---|
| Manufacturer | Ruichips |
| File Size | 464.19 KB |
| Description | N-Channel Advanced Power MOSFET |
| Datasheet |
RU30D20H Datasheet
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• 30V/20A, RDS (ON) =10mΩ(Typ.)@VGS=10V RDS (ON) =12mΩ(Typ.)@VGS=4.5V • Fast Switching Speed • Low gate Charge D2 D2 D1 D1 • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) G2 S2 Applications • Switching Application Systems G1 pin1 S1 ySOP-8 OnlD1 D2 UseG1 G2 Absolute Maximum Ratings Symbol times Parameter g Common Ratings (TA=25°C Unless Otherwise Noted) n VDSS Drain-Source Voltage he VGSS Gate-Source Voltage gs TJ Maximum Junction Temperature n TSTG Storage Temperature Range To IS Diode Continuous Forward Current Mounted on Large Heat Sink For IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=4.5V) S1 S2 Dual N-Channel MOSFET Rating Unit TA=25°C 30 V ±16 150 °C -55 to 150 °C 20 A TA=25°C TA=25°C TA=70°C 80 A 20 A 13 PD Maximum Power Dissipation TA=25°C TA=70°C 3.5 W 2.3 RJC Thermal Resistance-Junction to Case - °C/W RJA③ Thermal Resistance-Junction to Ambient 50 °C/W Drain-Source Avalanche Ratings EAS④ Avalanche Energy, Single Pulsed - mJ Shenzhen City Ruichips Semiconductor Co., Ltd Rev.
A– July., 2017 1 www.ruichips.com sales.Mr.wang13826508770 www.sztssd.com RU30D20H Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU30D20H Unit Min.
Typ.
sales.Mr.wang13826508770 www.sztssd.com RU30D20H N-Channel Advanced Power.
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