RU30E20H - N-Channel Advanced Power MOSFET

Product Overview

Ruichips

Datasheet Details

Part number	RU30E20H
Manufacturer	Ruichips
File Size	403.67 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU30E20H Datasheet
Additional preview pages of the RU30E20H datasheet.

Product details

Description

D D D D G S S pin1 S SOP-8 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=4.5V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA③ Thermal Resistance-Junction to Ambien

Features

30V/20A, RDS (ON) =4.6mΩ(Typ. )@VGS=10V RDS (ON) =5.8mΩ(Typ. )@VGS=4.5V RDS (ON) =15mΩ(Typ. )@VGS=2.5V.
Low On-Resistance.
ESD Protected.
Super High Dense Cell Design.
Reliable and Rugged.
Lead Free and Green Devices Available (RoHS Compliant).

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Published: Jan 8, 2019 |