Datasheet Details
| Part number | RU30E30L |
|---|---|
| Manufacturer | Ruichips |
| File Size | 271.83 KB |
| Description | N-Channel Advanced Power MOSFET |
| Datasheet |
 RU30E30L Datasheet
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General Description
TO252 N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Si
Key Features
- 30V/30A, RDS (ON) =16mΩ(tpy. )@VGS=10V RDS (ON) =26mΩ(tpy. )@VGS=4.5V.
- Super High Dense Cell Design.
- ESD protected.
- Reliable and Rugged.
- 100% avalanche tested.
- Lead Free and Green Devices Available (RoHS Compliant).