RU30E30L - N-Channel Advanced Power MOSFET

Description

TO252 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Si

Features

30V/30A, RDS (ON) =16mΩ(tpy. )@VGS=10V RDS (ON) =26mΩ(tpy. )@VGS=4.5V.
Super High Dense Cell Design.
ESD protected.
Reliable and Rugged.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant).

Ruichips

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Datasheet Details

Part number	RU30E30L
Manufacturer	Ruichips
File Size	271.83 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU30E30L Datasheet
Additional preview pages of the RU30E30L datasheet.

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Full PDF Text Transcription

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RU30E30L N-Channel Advanced Power MOSFET MOSFET Features • 30V/30A, RDS (ON) =16mΩ(tpy.)@VGS=10V RDS (ON) =26mΩ(tpy.)@VGS=4.

Published: Apr 26, 2016 |