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RU30E40L - N-Channel Advanced Power MOSFET

Description

TO252 Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Lar

Features

  • 30V/60A, RDS (ON) =5mΩ(Typ. )@VGS=10V RDS (ON) =10mΩ(Typ. )@VGS=4.5V.
  • Super High Dense Cell Design.
  • ESD protected.
  • Reliable and Rugged.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant).

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Datasheet preview – RU30E40L

Datasheet Details

Part number RU30E40L
Manufacturer Ruichips
File Size 289.85 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU30E40L Datasheet
Additional preview pages of the RU30E40L datasheet.

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Full PDF Text Transcription

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RU30E40L N-Channel Advanced Power MOSFET MOSFET Features • 30V/60A, RDS (ON) =5mΩ(Typ.)@VGS=10V RDS (ON) =10mΩ(Typ.)@VGS=4.5V • Super High Dense Cell Design • ESD protected • Reliable and Rugged • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management.
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