RU30E40L - N-Channel Advanced Power MOSFET

Product Overview

Ruichips

Datasheet Details

Part number	RU30E40L
Manufacturer	Ruichips
File Size	289.85 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU30E40L Datasheet
Additional preview pages of the RU30E40L datasheet.

Product details

Description

TO252 Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TC=25°C ID Continuous Drain Current(VGS=10V) TC=25°C TC=100°C PD Maximum Power Dissipation TC=25°C TC=100°C RθJC Thermal Resistance-Junction t

Features

30V/60A, RDS (ON) =5mΩ(Typ. )@VGS=10V RDS (ON) =10mΩ(Typ. )@VGS=4.5V.
Super High Dense Cell Design.
ESD protected.
Reliable and Rugged.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant).

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Published: Apr 26, 2016 |