Datasheet Details
| Part number | RU30E4B |
|---|---|
| Manufacturer | Ruichips |
| File Size | 308.56 KB |
| Description | N-Channel Advanced Power MOSFET |
| Datasheet |
 RU30E4B Datasheet
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General Description
D
G S
SOT23
D G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
①
I
Key Features
- 30V/4A, RDS (ON) =30mΩ(Typ. )@VGS=10V RDS (ON) =55mΩ(Typ. )@VGS=4.5V.
- Super High Dense Cell Design.
- ESD protected(Rating 2KV HBM).
- Reliable and Rugged.
- Lead Free and Green Devices Available (RoHS Compliant).