RU30E4B - N-Channel Advanced Power MOSFET

Description

D G S SOT23 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① I

Features

30V/4A, RDS (ON) =30mΩ(Typ. )@VGS=10V RDS (ON) =55mΩ(Typ. )@VGS=4.5V.
Super High Dense Cell Design.
ESD protected(Rating 2KV HBM).
Reliable and Rugged.
Lead Free and Green Devices Available (RoHS Compliant).

Ruichips

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Datasheet Details

Part number	RU30E4B
Manufacturer	Ruichips
File Size	308.56 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU30E4B Datasheet
Additional preview pages of the RU30E4B datasheet.

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Full PDF Text Transcription

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RU30E4B N-Channel Advanced Power MOSFET Features • 30V/4A, RDS (ON) =30mΩ(Typ.)@VGS=10V RDS (ON) =55mΩ(Typ.)@VGS=4.

Published: Apr 26, 2016 |