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RU30E60M2 - N-Channel Advanced Power MOSFET

Description

D D DD SSS G PIN1 PDFN3333 D PIN1 G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted

Features

  • 30V/60A, RDS (ON) =3mΩ(Typ. )@VGS=10V RDS (ON) =6mΩ(Typ. )@VGS=4.5V.
  • Super High Dense Cell Design.
  • Ulta Low On-Resistance.
  • ESD Protected(Rating 4KV HBM).
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant).

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Datasheet preview – RU30E60M2

Datasheet Details

Part number RU30E60M2
Manufacturer Ruichips
File Size 314.77 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU30E60M2 Datasheet
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Full PDF Text Transcription

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RU30E60M2 N-Channel Advanced Power MOSFET Features • 30V/60A, RDS (ON) =3mΩ(Typ.)@VGS=10V RDS (ON) =6mΩ(Typ.)@VGS=4.
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