RU30E60M2 - N-Channel Advanced Power MOSFET

Description

D D DD SSS G PIN1 PDFN3333 D PIN1 G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted

Features

30V/60A, RDS (ON) =3mΩ(Typ. )@VGS=10V RDS (ON) =6mΩ(Typ. )@VGS=4.5V.
Super High Dense Cell Design.
Ulta Low On-Resistance.
ESD Protected(Rating 4KV HBM).
Fast Switching Speed.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant).

Ruichips

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Datasheet Details

Part number	RU30E60M2
Manufacturer	Ruichips
File Size	314.77 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU30E60M2 Datasheet
Additional preview pages of the RU30E60M2 datasheet.

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Full PDF Text Transcription

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RU30E60M2 N-Channel Advanced Power MOSFET Features • 30V/60A, RDS (ON) =3mΩ(Typ.)@VGS=10V RDS (ON) =6mΩ(Typ.)@VGS=4.

Published: Apr 26, 2016 |