Datasheet4U Logo Datasheet4U.com

RU30J30M2 - Dual N-Channel Advanced Power MOSFET

Description

G2S2 S2 S2 G1D1D1D1 PDFN5 6 PIN1 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Lar

Features

  • 30V/30A, RDS (ON) =7mΩ(Typ. )@VGS=10V RDS (ON) =10mΩ(Typ. )@VGS=4.5V.
  • Fast Switching Speed.
  • Low gate Charge.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant).

📥 Download Datasheet

Datasheet Details

Part number RU30J30M2
Manufacturer Ruichips
File Size 661.88 KB
Description Dual N-Channel Advanced Power MOSFET
Datasheet download datasheet RU30J30M2 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RU30 Fast-Recovery Rectifier Diodes Sanken electric
RU3060L N-Channel MOSFET VBsemi
RU30A Fast-Recovery Rectifier Diodes Sanken electric
RU30E4B N-Channel MOSFET VBsemi
RU30Z Fast-Recovery Rectifier Diodes Sanken electric

Other Datasheets by Ruichips

Part Number Description
RU30J30M Dual N-Channel Advanced Power MOSFET
RU30100L N-Channel Advanced Power MOSFET
RU30100R N-Channel Advanced Power MOSFET
RU30105L N-Channel Advanced Power MOSFET
RU30105R N-Channel Advanced Power MOSFET

Full PDF Text Transcription

Click to expand full text
RU30J30M2 Dual N-Channel Advanced Power MOSFET Features • 30V/30A, RDS (ON) =7mΩ(Typ.)@VGS=10V RDS (ON) =10mΩ(Typ.)@VGS=4.
Published: |