Datasheet Details
| Part number | RU30L30M3 |
|---|---|
| Manufacturer | Ruichips |
| File Size | 366.41 KB |
| Description | P-Channel Advanced Power MOSFET |
| Download | RU30L30M3 Download (PDF) |
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Overview: RU30L30M3 P-Channel Advanced Power MOSFET.
| Part number | RU30L30M3 |
|---|---|
| Manufacturer | Ruichips |
| File Size | 366.41 KB |
| Description | P-Channel Advanced Power MOSFET |
| Download | RU30L30M3 Download (PDF) |
|
|
|
PIN1 S SG S D D DDD SDFN3030 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested Continuous Drain Current@TC(VGS=-10V) ID② Continuous Drain Current@TA(VGS=-10V)③ Maximum Power Dissipation@TC PD Maximum Power Dissipation@TA③ S P-Channel MOSFET Rating Unit TC=25°C -30 V ±20 150 °C -55 to 150 °C -30 A TC=25°C -96 A TC=25°C -30 TC=100°C -19 A TA=25°C -9.3 TA=70°C -7.5 TC=25°C 33 TC=100°C 13 W TA=25°C 3.5 TA=70°C 2.3 Ruichips Semiconductor Co., Ltd Rev.
A– MAY., 2015 1 www.ruichips.com RU30L30M3 Symbol Parameter Rating Unit RJC Thermal Resistance-Junction to Case 3.8 RJA③ Thermal Resistance-Junction to Ambient 35 Drain-Source Avalanche Ratings EAS④ Avalanche Energy, Single Pulsed 42 Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU30L30M3 Min.
Typ.
| Part Number | Description |
|---|---|
| RU30L30M | P-Channel Advanced Power MOSFET |
| RU30L15H | P-Channel Advanced Power MOSFET |
| RU30100L | N-Channel Advanced Power MOSFET |
| RU30100R | N-Channel Advanced Power MOSFET |
| RU30105L | N-Channel Advanced Power MOSFET |
| RU30105R | N-Channel Advanced Power MOSFET |
| RU30106L | N-Channel Advanced Power MOSFET |
| RU3010H | N-Channel Advanced Power MOSFET |
| RU30120L | N-Channel Advanced Power MOSFET |
| RU30120M | N-Channel Advanced Power MOSFET |