Datasheet4U Logo Datasheet4U.com

RU30L30M3 - P-Channel Advanced Power MOSFET

Description

PIN1 S SG S D D DDD SDFN3030 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large

Features

  • -30V/-30A, RDS (ON) =12mΩ(Typ. )@VGS=-10V RDS (ON) =20mΩ(Typ. )@VGS=-4.5V.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • 100% Avalanche Tested.
  • Lead Free and Green Devices Available (RoHS Compliant).

📥 Download Datasheet

Datasheet Details

Part number RU30L30M3
Manufacturer Ruichips
File Size 366.41 KB
Description P-Channel Advanced Power MOSFET
Datasheet download datasheet RU30L30M3 Datasheet

📁 Similar Datasheet

  • RU30 - Fast-Recovery Rectifier Diodes (Sanken electric)
  • RU3060L - N-Channel MOSFET (VBsemi)
  • RU30A - Fast-Recovery Rectifier Diodes (Sanken electric)
  • RU30E4B - N-Channel MOSFET (VBsemi)
  • RU30Z - Fast-Recovery Rectifier Diodes (Sanken electric)
  • RU3 - Fast-Recovery Rectifier Diodes (Sanken electric)
  • RU3 - FAST RECOVERY RECTIFIER DIODES (EIC)
  • RU3 - Silicon And Fast Recovery Rectifiers (WEJ)
  • RU31 - Fast-Recovery Rectifier Diodes (Sanken electric)
  • RU31 - Fast-Recovery Rectifier Diodes (Sanken electric)
Other Datasheets by Ruichips
  • RU30L30M - P-Channel Advanced Power MOSFET
  • RU30L15H - P-Channel Advanced Power MOSFET
  • RU30100L - N-Channel Advanced Power MOSFET
  • RU30100R - N-Channel Advanced Power MOSFET
  • RU30105L - N-Channel Advanced Power MOSFET
  • RU30105R - N-Channel Advanced Power MOSFET
  • RU30106L - N-Channel Advanced Power MOSFET
  • RU3010H - N-Channel Advanced Power MOSFET

Full PDF Text Transcription

Click to expand full text
RU30L30M3 P-Channel Advanced Power MOSFET Features • -30V/-30A, RDS (ON) =12mΩ(Typ.)@VGS=-10V RDS (ON) =20mΩ(Typ.)@VGS=-4.
Published: |