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RU3582S Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

Datasheet Details

Part number RU3582S
Manufacturer Ruichips
File Size 289.10 KB
Description N-Channel Advanced Power MOSFET
Download RU3582S Download (PDF)

General Description

TO-263 Applications • Switching Application Systems • UPS N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating 40 ±20 175 -55 to 175 TC=25°C 100 400 ① Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS IDP ID Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current V °C °C A Mounted on Large Heat Sink 300μs Pulse Drain Current Tested Continuous Drain Current(VGS=10V) TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C ② ① A A 100 73 53 PD RθJC ③ 107 W °C/W 1.4 Maximum Power Dissipation Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed 576 mJ Copyright© Ruichips Semiconductor Co., Ltd Rev.

C– OCT., 2012 www.ruichips.com RU3582S Electrical Characteristics Symbol Parameter (TA=25°C Unless Otherwise Noted) RU3582S Min.

Typ.

Overview

RU3582S N-Channel Advanced Power MOSFET MOSFET.

Key Features

  • 40V/100A, RDS (ON) =5mΩ (Typ. ) @ VGS=10V.
  • Ultra Low On-Resistance.
  • Fast Switching.
  • 100% avalanche tested.
  • 175°C Operating Temperature.
  • Lead Free,RoHS compliant Pin.