RU40190S Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

RU40190S n-channel advanced power mosfet by Ruichips - Datasheet Preview

Datasheet Details

Part number	RU40190S
Manufacturer	Ruichips
File Size	292.62 KB
Description	N-Channel Advanced Power MOSFET
Download	RU40190S Download (PDF)

General Description

TO-263 Applications • DC-DC Converters and Off-line UPS • Switching Applications N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev.

A– OCT., 2012 Rating 40 ±20 175 -55 to 175 ① 190 ② 760 ① 190 ① 146 300 150 0.5 Unit V °C °C A A A W W °C/W 812 mJ www.ruichips.com RU40190S Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU40190S Unit Min.

Typ.

Overview

RU40190S N-Channel Advanced Power MOSFET MOSFET.

Key Features

40V/190A, RDS (ON) =2.5mΩ(Typ. )@VGS=10V.
Super High Dense Cell Design.
Ultra Low On-Resistance.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant) Pin.

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