RU40191S - N-Channel Advanced Power MOSFET

Description

D G S TO263 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300

Features

40V/190A, RDS (ON) =1.8mΩ(Typ. )@VGS=10V.
Super High Dense Cell Design.
Ultra Low On-Resistance.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant).

Ruichips

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Datasheet Details

Part number	RU40191S
Manufacturer	Ruichips
File Size	629.49 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU40191S Datasheet
Additional preview pages of the RU40191S datasheet.

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Full PDF Text Transcription

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RU40191S N-Channel Advanced Power MOSFET Features • 40V/190A, RDS (ON) =1.8mΩ(Typ.

Published: Apr 10, 2017 |