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RU40P3C Datasheet P-channel Advanced Power MOSFET

Manufacturer: Ruichips

Overview: RU40P3C P-Channel Advanced Power MOSFET.

Datasheet Details

Part number RU40P3C
Manufacturer Ruichips
File Size 317.16 KB
Description P-Channel Advanced Power MOSFET
Datasheet RU40P3C-Ruichips.pdf

General Description

D G S SOT23-3 D G Absolute Maximum Ratings Symbol Parameter mon Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=-10V) PD Maximum Power Dissipation RθJC RθJA③ Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ④ EAS Avalanche Energy, Single Pulsed S P-Channel MOSFET Rating Unit TA=25°C -40 ±20 150 -55 to 150 -1.5 V °C °C A TA=25°C TA=25°C TA=70°C TA=25°C TA=70°C -12 A -3 A -2.2 1.3 W 0.8 - °C/W 100 °C/W - mJ Ruichips Semiconductor Co., Ltd Rev.

B– MAR., 2013 1 .ruichips.

RU40P3C Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU40P3C Min.

Key Features

  • -40V/-3A, RDS (ON) =100mΩ(Typ. )@VGS=-10V RDS (ON) =150mΩ(Typ. )@VGS=-4.5V.
  • Low On-Resistance.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant).

RU40P3C Distributor