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RU4953BH Datasheet P-channel Advanced Power MOSFET

Manufacturer: Ruichips

Overview: RU4953BH P-Channel Advanced Power MOSFET.

Datasheet Details

Part number RU4953BH
Manufacturer Ruichips
File Size 390.22 KB
Description P-Channel Advanced Power MOSFET
Datasheet RU4953BH-Ruichips.pdf

General Description

D2 D2 D1 D1 G2 S2 G1 pin1 S1 SOP-8 Absolute Maximum Ratings Symbol Parameter mon Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=-10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA③ Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS④ Avalanche Energy, Single Pulsed Shenzhen City Ruichips Semiconductor Co., Ltd Rev.

A– JUN., 2018 1 Dual P-Channel MOSFET Rating Unit TA=25°C -30 V ±12 150 °C -55 to 150 °C -1 A TA=25°C TA=25°C TA=70°C TA=25°C TA=100°C -20 A -5 A -4 2.5 W 1 - °C/W 50 °C/W - mJ .ruichips.

RU4953BH Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU4953BH Min.

Key Features

  • -30V/-5A, RDS (ON) =50mΩ(Typ. )@VGS=-10V RDS (ON) =70mΩ(Typ. )@VGS=-4.5V.
  • Low On-Resistance.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant).

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