RU4H10P
RU4H10P is N-Channel Advanced Power MOSFET manufactured by Ruichips.
Features
- 400V/10A, RDS (ON) =0.45Ω (Typ.) @ VGS=10V
- Gate charge minimized
- Low Crss( Typ. 18p F)
- Extremely high dv/dt capability
- 100% avalanche tested
- Lead Free and Green Available
N-Channel Advanced Power MOSFET
MOSFET
Pin Description
TO-220F
Applications
- High efficiency switch mode power supplies
- Lighting
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter mon Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
②
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C
Copyright© Ruichips Semiconductor Co., Ltd Rev. A
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