RU4H10P Description
TO-220F Applications High efficiency switch mode power supplies Lighting N-Channel MOSFET Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD...
RU4H10P Key Features
- 400V/10A, RDS (ON) =0.45Ω (Typ.) @ VGS=10V
- Gate charge minimized
- Low Crss( Typ. 18pF)
- Extremely high dv/dt capability
- 100% avalanche tested
- Lead Free and Green Available