RU4H10P Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

RU4H10P n-channel advanced power mosfet by Ruichips - Datasheet Preview

Datasheet Details

Part number	RU4H10P
Manufacturer	Ruichips
File Size	292.70 KB
Description	N-Channel Advanced Power MOSFET
Download	RU4H10P Download (PDF)

General Description

TO-220F Applications • High efficiency switch mode power supplies • Lighting N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ② EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev.

A – FEB., 2012 Ra

Key Features

400V/10A, RDS (ON) =0.45Ω (Typ. ) @ VGS=10V.
Gate charge minimized.
Low Crss( Typ. 18pF).
Extremely high dv/dt capability.
100% avalanche tested.
Lead Free and Green Available RU4H10P N-Channel Advanced Power MOSFET MOSFET Pin.

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